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10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 1 16 nov. 2015 / revision 3 parameter symbol value unit maximum junction temperature t jmax 175 c 20 v total power dissipation p tot t j = t jmax t s =80 c 145 w gate-emitter voltage v ges repetitive peak collector current i crm t p limited by t jmax 600 a a condition collector-emitter voltage v ces 650 v collector current i c t j = t jmax t s =80 c 94 maximum ratings t j =25c, unless otherwise specified buck switch / out. boost switch flow npc 1 650 v / 200 a npc inverter topology optimized for full rated bi-directional usage (4 quadrant operation) high-speed igbt in all switch positions ntc low inductive design with integrated dc capacitor flow 1-12mm package solder pin press-fit solar ups 10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y flow 1 12mm housing schematic features target applications types
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 2 16 nov. 2015 / revision 3 symbol value unit t p = 60s 2500 v t p = 2s 6000 v min 12,7 mm 8,07 \ 7,86 mm cti >200 v i sol solder pin \ press-fit ac voltage rms dc voltage creepage distance clearance comparative tracking index isolation voltage thermal properties storage temperature operation junction temperature isolation properties c c t stg -40+125 t jop -40+( t jmax - 25) conditions parameter parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 400 a continuous (direct) forward current i f t j = t jmax t h = 80c 107 a total power dissipation p tot t j = t jmax t h = 80c 131 w maximum junction temperature t jmax 175 c parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 400 a continuous (direct) forward current i f t j = t jmax t h = 80c 124 a total power dissipation p tot t j = t jmax t h = 80c 164 w maximum junction temperature t jmax 175 c buck diode\out. boost diode out. boost inverse diode dc link capacitor module properties parameter symbol value unit maximum dc voltage operation temperature c 500 -55+125 v max v t op conditions
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 3 16 nov. 2015 / revision 3 buck switch characteristic values 25 67 125 66 25 11 125 12 25 158 125 174 25 7 125 9 q rfwd = 4,6 c 25 1,101 q rfwd = 9,1 c 125 1,637 25 0,576 125 0,922 t d(off) fall time t f turn-on energy (per pulse) e on mws turn-off energy (per pulse) e off 120 ns rise time t r r gon = 4 ? turn-off delay time turn-on delay time t d(on) r goff = 4 ? 15 350 igbt switching 25 3,2 4 4,8 125 25 1,69 2,1 125 1,86 150 1,96 25 200 125 25 200 125 0,65 k/w thermal thermal resistance junc tion to sink r th(j-s) phase-change material ? =3,4w /mk 200 25 420 nc reverse transfer capac itance c res 42 gate c harge q g 15 520 25 13120 pf output capacitance c oes 194 none ? input capacitance c ies f=1 mhz 0 25 internal gate resistance r g a gate-emitter leakage c urrent i ges 20 0 na collec tor-emitter c ut-off current i ces 0 650 static v ge [v] v ce [v] i c [a] v collec tor-emitter saturation voltage v cesat 15 200 v gate-emitter threshold voltage v ge(th) v ge = v ce 0,002 parameter symbol conditions value unit t j [ c] min typ max
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 4 16 nov. 2015 / revision 3 buck diode 25 1,65 2,65 125 1,60 150 1,58 25 10,6 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 200 v reverse leakage c urrent i r 650 a forward voltage v f thermal thermal resistance junc tion to sink r th(j-s) phase-change material ? =3,4w/mk k/w 0,73 25 114 125 160 25 59 125 91 d i /d t = 9293 a/s 25 4,639 d i /d t = 7591 a/s 125 9,105 25 0,966 125 1,930 25 3621 125 2111 q r c reverse recovered energy e rec mws peak rate of fall of recovery current (d i rf /d t ) max a/s peak recovery current i rrm 15 350 120 a reverse recovery time t rr ns recovered charge fwd switching
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 5 16 nov. 2015 / revision 3 out. boost switch 25 76 125 62 25 12 125 14 25 153 125 171 25 7 125 12 q rfwd = 4,5 c 25 1,709 q rfwd = 9,2 c 125 2,573 25 0,542 125 1,009 t d(off) fall time t f turn-on energy (per pulse) e on mws turn-off energy (per pulse) e off 120 ns rise time t r r gon = 4 ? turn-off delay time turn-on delay time t d(on) r goff = 4 ? 15 350 igbt switching 25 3,2 4 4,8 125 25 1,69 2,1 125 1,86 150 1,96 25 200 125 25 200 125 0,65 k/w thermal thermal resistance junc tion to sink r th(j-s) phase-change material ? =3,4w /mk 200 25 420 nc reverse transfer capac itance c res 42 gate c harge q g 15 520 25 13120 pf output capacitance c oes 194 none ? input capacitance c ies f=1 mhz 0 25 internal gate resistance r g a gate-emitter leakage c urrent i ges 20 0 na collec tor-emitter c ut-off current i ces 0 650 static v ge [v] v ce [v] i c [a] v collec tor-emitter saturation voltage v cesat 15 200 v gate-emitter threshold voltage v ge(th) v ge = v ce 0,002 parameter symbol conditions value unit t j [ c] min typ max
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 6 16 nov. 2015 / revision 3 out. boost diode 25 91 125 129 25 70 125 103 d i /d t = 6472 a/s 25 4,495 d i /d t = 5169 a/s 125 9,160 25 0,800 125 1,676 25 2015 125 1571 q r c reverse recovered energy e rec mws peak rate of fall of recovery current (d i rf /d t ) max a/s peak recovery current i rrm 15 350 120 a reverse recovery time t rr ns recovered charge fwd switching 25 1,65 2,65 125 1,60 150 1,58 25 10,6 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 200 v reverse leakage c urrent i r 650 a forward voltage v f thermal thermal resistance junc tion to sink r th(j-s) phase-change material ? =3,4w/mk k/w 0,73
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 7 16 nov. 2015 / revision 3 out. boost inverse diode thermistor parameter symbol unit v ge [v] v ce [v] i c [a] t j [ c] min typ max f vincotech ntc reference power dissipation constant power dissipation p b-value b (25/100) b-value b (25/50) k 25 3,5 mw/k 25 3884 25 3964 k 25 21,5 k? +4,5 % 210 100 -4,5 25 mw rated resistance r deviation of r100 r/r r100=1486 ? conditions value dc link capacitor 300 nf capacitance c t j [c] min typ max -10 parameter symbol conditions value unit tolerance % +10 25 1,77 1,9 125 1,69 150 1,66 25 54 150 0,58 k/w thermal resistance junc tion to sink r th(j-s) phase-change material ? =3,4w/mk thermal v reverse leakage c urrent i r 650 a forward voltage v f 200 t j [c] min typ max static i f [a] parameter symbol conditions value unit v r [v]
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 8 16 nov. 2015 / revision 3 buck switch\ out. boost switch characteristics typical output characteristics igbt typical output characteristics igbt i c = f( v ce ) i c = f( v ce ) t p = 250 s 25 c t p = 250 s v ge = 15 v t j : 125 c t j = 125 c 150 c v ge from 7 v to 17 v in steps of 1 v typical transfer characteristics igbt transient thermal impedance as function of puls e duration igbt i c = f( v ge ) z th(j-s) = f( t p ) t p = 100 s 25 c d = t p / t v ce = 0 v t j : 125 c r th(j-s) = 0,65 k/w 150 c r th (k/w) (s) 7,51e-02 3,22e+00 1,27e-01 5,51e-01 3,27e-01 1,11e-01 7,19e-02 2,69e-02 3,44e-02 6,17e-03 1,81e-02 5,82e-04 igbt thermal model values 0 50 100 150 200 0 2 4 6 8 i i i i c cc c (a) (a) (a) (a) v vv v g e g e g e g e (v) (v)(v) (v) 0 100 200 300 400 500 600 0 1 2 3 4 5 i i i i c c c c (a) v vv v c e c ec e c e (v) 0 100 200 300 400 500 600 0 1 2 3 4 5 i i i i c cc c (a) v vv v c e c ec e c e (v) 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 z z z z t h( j t h( j t h( j t h( j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 1 10 2 10 -3 10 -2 10 -1 10 0 10 1
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 9 16 nov. 2015 / revision 3 buck switch\ out. boost switch characteristics gate voltage vs gate charge igbt safe operating area igbt v ge = f( q g ) i c = f( v ce ) at at i c = 200 a d = single pulse t h = 80 oc v ge = 15 v t j = t jmax oc 130v 520v 0 2,5 5 7,5 10 12,5 15 0 50 100 150 200 250 v v v v g e g e g e g e (v) q qq q g gg g (nc) 0,1 1 10 100 1000 1 10 100 1000 i i i i c cc c (a) v vv v c e c ec e c e (v)
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 10 16 nov. 2015 / revision 3 buck diode\out. boost diode characteristics typical forward characteristics fwd transient thermal impedance as a function of pulse width fwd i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t t j : 125 c r th(j-s) = 0,73 k/w 150 c fwd thermal model values r (k/w) (s) 8,64e-02 3,05e+00 1,38e-01 6,75e-01 3,34e-01 1,25e-01 1,06e-01 3,99e-02 4,34e-02 6,89e-03 1,90e-02 7,34e-04 0 100 200 300 400 500 600 0 1 2 3 4 5 i f (a) v f (v) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 11 16 nov. 2015 / revision 3 typical forward characteristics diode transient thermal impedance as a function of pulse width diode i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t t j : 125 c r th(j-s) = 0,58 k/w 150 c diode thermal model values r (k/w) (s) 5,80e-02 8,20e+00 8,03e-02 1,08e+00 1,46e-01 1,95e-01 2,11e-01 6,41e-02 6,77e-02 1,10e-02 1,80e-02 2,03e-03 0 100 200 300 400 500 600 0 1 2 3 4 5 i f (a) v f (v) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 out. boost inverse diode characteristics thermistor characteristics thermistor typical temperature characteristic typical thermistor resistance values typical ntc characteristic as a function of temperature r t = f( t ) 0 5000 10000 15000 20000 25000 25 50 75 100 125 r (?) t (c) ntc-typical temperature characteristic
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 12 16 nov. 2015 / revision 3 buck switching characteristics figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unction of co llector current typical swit ching energy losses as a f unct ion of ga te resistor e = f( i c ) e = f(r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15 v v ge = 15 v r gon = 4 ? i c = 120 a r goff = 4 ? figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unction of collector current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15 v v ge = 15 v r gon = 4 ? i c = 120 a e rec e rec 0 0,5 1 1,5 2 0 20 40 60 80 100 120 140 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e rec e rec 0 0,5 1 1,5 2 2,5 0 2 4 6 8 10 12 14 16 18 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) e ee e on on on on e on e ee e o ff o ff o ff o ff e off 0 0,5 1 1,5 2 0 20 40 60 80 100 120 140 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e off e on e o n o n o n o n e o ff o ffo ff o ff 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 e e e e ( mws) ( mws) ( mws) ( mws) r rr r g g g g ( (( ( ) )) )
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 13 16 nov. 2015 / revision 3 buck switching characteristics figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collector current typical swit ching t imes as a f unct ion of gate resis tor t = f( i c ) t = f( r g ) with an induc tive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 120 a r goff = 4 ? figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unction of coll ector current typical reverse recovery t ime as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 4 ? i c = 120 a t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 20 40 60 80 100 120 140 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 2 4 6 8 10 12 14 16 18 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr 0 0,03 0,06 0,09 0,12 0,15 0 2 4 6 8 10 12 14 16 18 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g on g on g on g on ( (( ( ) )) ) t rr t rr 0 0,02 0,04 0,06 0,08 0,1 0 20 40 60 80 100 120 140 t t t t rr rr rr rr ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a)
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 14 16 nov. 2015 / revision 3 buck switching characteristics figure 9. fwd figure 10. fwd typical recovered charge as a f unction of collector current typical recoved charge as a f unct ion of igbt t urn o n gate resistor q r = f( i c ) q r = f( r gon ) at at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 4 ? i c = 120 a figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unct ion of collect or current typical peak reverse recovery current as a f unct ion of igbt t urn on gate resist or i rm = f( i c ) i rm = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 4 ? i c = 120 a i rm i rm 0 50 100 150 200 250 0 2 4 6 8 10 12 14 16 18 i i i i r m r m r m r m (a) (a) (a) (a) r rr r g o n g o n g o n g o n ( (( ( ) )) ) q qq q r r r r q r 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 q q q q r rr r (c) (c) (c) (c) r rr r g o n g o n g o n g o n ( (( ( ) )) ) i ii i rm rmrm rm i rm 0 50 100 150 200 0 20 40 60 80 100 120 140 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r 0 2 4 6 8 10 0 20 40 60 80 100 120 140 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a)
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 15 16 nov. 2015 / revision 3 buck switching characteristics figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rat e of f all of f orward and reverse recovery curre nt as a f unction of igbt t urn on gat e resist or d i f /d t ,d i rr /dt = f( i c) d i f /d t ,d i rr /dt = f( r g) at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 4 ? i c = 120 a 0 3000 6000 9000 12000 15000 18000 0 2 4 6 8 10 12 14 16 18 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 3000 6000 9000 12000 15000 0 20 40 60 80 100 120 140 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t figure 15. igbt reverse bias saf e operating area i c = f( v ce ) at t j = 175 c r gon = 4 ? r goff = 4 ? 0 50 100 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c module module module module i i i i c cc c chip chip chip chip
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 16 16 nov. 2015 / revision 3 buck switching definitions t j 125 c r gon 4 ? r goff 4 ? figure 1. igbt figure 2. igbt turn-of f swit ching wavef orms & def init ion of t dof f , t eof f (t eof f = int egrat ing t ime f or eof f ) turn-on s wit ching wavef orms & def init ion of tdon, t eon (t eon = int egrating t ime f or eon) v ge (0%) = 0 v v ge (0%) = 0 v v ge (100%) = 20 v v ge (100%) = 20 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 120 a i c (100%) = 120 a t doff = 0,174 s t don = 0,066 s t eoff = 0,188 s t eon = 0,154 s figure 3. igbt figure 4. igbt turn-of f swit ching wavef orms & def init ion of t f turn-on swit ching wavef orms & def init ion of tr v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 120 a i c (100%) = 120 a t f = 0,009 s t r = 0,012 s = general conditions == i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 150 175 -0,05 0 0,05 0,1 0,15 0,2 0,25 0,3 0,35 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 2,95 2,99 3,03 3,07 3,11 3,15 3,19 % t tt t (s) (s)(s) (s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 150 175 0,15 0,17 0,19 0,21 0,23 0,25 0,27 % t tt t ( s) ( s)( s) ( s) v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3 3,03 3,06 3,09 3,12 3,15 3,18 % t tt t (s) (s)(s) (s) t r v ce i c
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 17 16 nov. 2015 / revision 3 buck switching definitions figure 5. igbt figure 6. igbt turn-of f swit ching wavef orms & def init ion of t eof f turn-on swit ching wavef orms & def init ion of teon p off (100%) = 41,86 kw p on (100%) = 41,86 kw e off (100%) = 0,92 mj e on (100%) = 1,64 mj t eoff = 0,188 s t eon = 0,154 s figure 7. fwd turn-of f swit ching wavef orms & def init ion of t rr v d (100%) = 350 v i d (100%) = 120 a i rrm (100%) = -160 a t rr = 0,091 s i c 1% v ge 90% -25 0 25 50 75 100 125 0 0,05 0,1 0,15 0,2 0,25 0,3 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 125 2,95 3 3,05 3,1 3,15 3,2 % t tt t ( s) ( s)( s) ( s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3 3,05 3,1 3,15 3,2 3,25 3,3 % t tt t (s) (s)(s) (s) i d v d fitted
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 18 16 nov. 2015 / revision 3 buck switching definitions figure 8. fwd figure 9. fwd turn-on switching waveforms & definition of t qrr (t qrr = integrating time for q rr ) turn-on switching waveforms & definition of t erec (t erec = integrating time for e rec ) i d (100%) = 120 a p rec (100%) = 41,86 kw q rr (100%) = 9,11 c e rec (100%) = 1,93 mj t qrr = 0,18 s t erec = 0,18 s t qrr -150 -100 -50 0 50 100 150 2,95 3,03 3,11 3,19 3,27 3,35 % t tt t (s) (s)(s) (s) i d q rr -25 0 25 50 75 100 125 2,95 3,03 3,11 3,19 3,27 3,35 % t tt t (s) (s)(s) (s) p rec e rec t erec v vce v vge 115uh l2 v vcc boost fred buck igbt buck fred boost igbt -15v +15v q q 0.00001 q q 0.000003 q q +15v -15v rgoff rgon a vdc 700 47kohm 3*470uf 3*470uf 47kohm l 1mh -15v t11-t15 t13-t17 t14-t18 t12-t16 d11 d12
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 19 16 nov. 2015 / revision 3 out. boost switching characteristics figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unction of co llector current typical swit ching energy losses as a f unct ion of ga te resistor e = f( i c ) e = f(r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15 v v ge = 15 v r gon = 4 ? i c = 120 a r goff = 4 ? figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unction of collector current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15 v v ge = 15 v r gon = 4 ? i c = 120 a e rec e rec 0 0,5 1 1,5 2 0 20 40 60 80 100 120 140 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e rec e rec 0 0,5 1 1,5 2 2,5 0 2 4 6 8 10 12 14 16 18 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) e ee e o n o n o n o n e on e ee e off off off off e off 0 0,5 1 1,5 2 2,5 3 0 20 40 60 80 100 120 140 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e off e on e o n o n o n o n e o ff o ffo ff o ff 0 1 2 3 4 5 6 0 2 4 6 8 10 12 14 16 18 e e e e ( mws) ( mws) ( mws) ( mws) r rr r g g g g ( (( ( ) )) )
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 20 16 nov. 2015 / revision 3 out. boost switching characteristics figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collector current typical swit ching t imes as a f unct ion of gate resis tor t = f( i c ) t = f( r g ) with an induc tive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 120 a r goff = 4 ? figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unction of coll ector current typical reverse recovery t ime as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 4 ? i c = 120 a t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 20 40 60 80 100 120 140 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 2 4 6 8 10 12 14 16 18 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr 0 0,03 0,06 0,09 0,12 0,15 0 2 4 6 8 10 12 14 16 18 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g on g on g on g on ( (( ( ) )) ) t rr t rr 0 0,02 0,04 0,06 0,08 0,1 0,12 0 20 40 60 80 100 120 140 t t t t r r r r r r r r ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a)
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 21 16 nov. 2015 / revision 3 out. boost switching characteristics figure 9. fwd figure 10. fwd typical recovered charge as a f unction of collector current typical recoved charge as a f unct ion of igbt t urn o n gate resistor q r = f( i c ) q r = f( r gon ) at at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 4 ? i c = 120 a figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unct ion of collect or current typical peak reverse recovery current as a f unct ion of igbt t urn on gate resist or i rm = f( i c ) i rm = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 4 ? i c = 120 a i rm i rm 0 30 60 90 120 150 180 0 2 4 6 8 10 12 14 16 18 i i i i r m r m r m r m (a) (a) (a) (a) r rr r g o n g o n g o n g o n ( (( ( ) )) ) q qq q r r r r q r 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 q q q q r rr r (c) (c) (c) (c) r rr r g o n g o n g o n g o n ( (( ( ) )) ) i ii i r m r mr m r m i rm 0 30 60 90 120 150 0 20 40 60 80 100 120 140 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r 0 2 4 6 8 10 0 20 40 60 80 100 120 140 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a)
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 22 16 nov. 2015 / revision 3 out. boost switching characteristics figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rat e of f all of f orward and reverse recovery curre nt as a f unction of igbt t urn on gat e resist or d i f /d t ,d i rr /dt = f( i c) d i f /d t ,d i rr /dt = f( r g) at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 4 ? i c = 120 a 0 3000 6000 9000 12000 0 2 4 6 8 10 12 14 16 18 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 2000 4000 6000 8000 10000 0 20 40 60 80 100 120 140 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t figure 15. igbt reverse bias saf e operating area i c = f( v ce ) at t j = 175 c r gon = 4 ? r goff = 4 ? 0 50 100 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c m odule m odule m odule m odule i i i i c cc c chip chip chip chip
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 23 16 nov. 2015 / revision 3 out. boost switching definitions t j 125 c r gon 4 ? r goff 4 ? figure 1. igbt figure 2. igbt turn-of f swit ching wavef orms & def init ion of t dof f , t eof f (t eof f = int egrat ing t ime f or eof f ) turn-on s wit ching wavef orms & def init ion of tdon, t eon (t eon = int egrating t ime f or eon) v ge (0%) = 0 v v ge (0%) = 0 v v ge (100%) = 20 v v ge (100%) = 20 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 120 a i c (100%) = 120 a t doff = 0,171 s t don = 0,062 s t eoff = 0,189 s t eon = 0,165 s figure 3. igbt figure 4. igbt turn-of f swit ching wavef orms & def init ion of t f turn-on swit ching wavef orms & def init ion of tr v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 120 a i c (100%) = 120 a t f = 0,012 s t r = 0,014 s = general conditions == i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 150 175 -0,05 0 0,05 0,1 0,15 0,2 0,25 0,3 0,35 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 2,95 2,99 3,03 3,07 3,11 3,15 3,19 3,23 % t tt t (s) (s)(s) (s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 150 0,12 0,145 0,17 0,195 0,22 0,245 % t tt t ( s) ( s)( s) ( s) v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3,03 3,06 3,09 3,12 3,15 3,18 3,21 % t tt t (s) (s)(s) (s) t r v ce i c
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 24 16 nov. 2015 / revision 3 out. boost switching definitions figure 5. igbt figure 6. igbt turn-of f swit ching wavef orms & def init ion of t eof f turn-on swit ching wavef orms & def init ion of teon p off (100%) = 42,14 kw p on (100%) = 42,14 kw e off (100%) = 1,01 mj e on (100%) = 2,57 mj t eoff = 0,189 s t eon = 0,165 s figure 7. fwd turn-of f swit ching wavef orms & def init ion of t rr v d (100%) = 350 v i d (100%) = 120 a i rrm (100%) = -129 a t rr = 0,103 s i c 1% v ge 90% -25 0 25 50 75 100 125 -0,05 0 0,05 0,1 0,15 0,2 0,25 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 125 2,95 3 3,05 3,1 3,15 3,2 3,25 % t tt t ( s) ( s)( s) ( s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3 3,05 3,1 3,15 3,2 3,25 3,3 % t tt t (s) (s)(s) (s) i d v d fitted
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 25 16 nov. 2015 / revision 3 out. boost switching definitions figure 8. fwd figure 9. fwd turn-on switching waveforms & definition of t qrr (t qrr = integrating time for q rr ) turn-on switching waveforms & definition of t erec (t erec = integrating time for e rec ) i d (100%) = 120 a p rec (100%) = 42,14 kw q rr (100%) = 9,16 c e rec (100%) = 1,68 mj t qrr = 0,20 s t erec = 0,20 s t qrr -150 -100 -50 0 50 100 150 3,03 3,09 3,15 3,21 3,27 3,33 % t tt t (s) (s)(s) (s) i d q rr -25 0 25 50 75 100 125 2,95 3,03 3,11 3,19 3,27 3,35 % t tt t (s) (s)(s) (s) p rec e rec t erec v vce v vge 115uh l2 vdc +350v a ic v vcc boost fred buck igbt buck fred boost igbt -15v -15v +15v q q 0.00001 q q 0.000003 q q +15v -15v rgoff rgon t11-t15 t12-t16 d12 d11 t13-t17 t14-t18
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 26 16 nov. 2015 / revision 3 date code ul & vinco lot serial wwyy ul vinco lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 52,2 6,9 therm1 2 52,2 0 therm2 3 36,2 6,75 s4 4 33,2 7,9 g14 5 33,2 4,9 g18 6 9,2 5,75 s2 7 6,2 6,9 g12 8 6,2 3,9 g16 9 2,7 0 dc- 10 0 0 dc- 11 2,7 2,7 dc- 12 0 2,7 dc- 13 2,7 5,4 dc- 14 0 5,4 dc- 15 2,7 12,75 gnd 16 0 12,75 gnd 17 2,7 15,45 gnd 18 0 15,45 gnd 19 2,7 22,8 dc+ 20 0 22,8 dc+ 21 2,7 25,5 dc+ pin x y function 22 0 25,5 dc+ 30 46 24 g13 23 2,7 28,2 dc+ 31 52,2 20,1 ph 24 0 28,2 dc+ 32 49,5 22,8 ph 25 18,3 22,45 s1 33 52,2 22,8 ph 26 21,3 21,3 g15 34 49,5 25,5 ph 27 21,3 24,3 g11 35 52,2 25,5 ph 28 43 22,15 s3 36 49,5 28,2 ph 29 46 21 g17 37 52,2 28,2 ph version without thermal paste 12mm housing with solder pins without thermal paste 12mm housing with press-fit p ins pin table [mm] ordering code & marking name nn-nnnnnnnnnnnnnn-tttttttvv outline text datamatrix pin table [mm] ordering code 10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y nn-nnnnnnnnnnnnnn tttttttvv wwyy ul vinco lllll ssss
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 27 16 nov. 2015 / revision 3 rt ntc - - thermistor out. boost switch 100a out. boost diode 100a capacitor fwd 650v 500v out. boost inverse diode 650v - dc link capacitor c1,c2 id d13,d14,d17,d18 igbt fwd component d43,d44,d47,d48 fwd t13,t14,t17,t18 igbt 650v 100a identification t11,t12,t15,t16 d11,d12 comment 650v 650v voltage current function 100a buck switch 200a buck diode pinout
10-FY07NPA200SM02-L366F08 10-py07npa200sm02-l366f08y datasheet copyright vincotech 28 16 nov. 2015 / revision 3 disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. standard packaging quantity (spq) sample handling instruction 100 >spq standard 10-FY07NPA200SM02-L366F08-d3-14 16 nov. 2015 document no.: date: modification: added press-fit option

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